云顶国际集团优惠活动大厅

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1. 未来新型CMOS芯片器件的设计、工艺及模型：过去半个世纪信息产业的发展都是建立在摩尔定律基础上的，而目前随着器件尺缩接近物理极限，传统摩尔定律的技术框架难以为续。在这方面我们将探索新原理器件，以及这些器件在未来芯片设计中的应用。

2. 人工智能在半导体器件和集成电路设计中的应用（人工智能 EDA 技术）：EDA软件是半导体产业界急缺的工具，基于人工智能的EDA技术可以极大的提高芯片设计和芯片生产的效率和良率，将成为未来半导体产业界核心竞争力。

3. 课题组特点：

（a）本课题组有充足的研究经费，与行业领头企业和国内外顶尖研究机构有良好合作关系。 ( 目前承担国家自然科学基金委项目，科技部重点研发项目，行业头部企业项目。在研经费 > 1000 万元 )，保证课题组成员研究所需资源。

（b）课题组负责人在 Science, IEEE EDL，DAC 等一流杂志和半导体领域顶会发表论文多篇，国际专利及专利申请60余项，为课题组在学术届发展打下了良好的基础。

（c）课题组负责人在世界顶尖企业核心研发部门工作多年，有丰富产业界经验。为有志在工业界发展的课题组成员提供资源保障。

4. 课题组培养（本课题组长期招聘博士后，博士和硕士）：欢迎信息、微电子、物理、计算机、数学、材料科学背景并基础扎实的同学申请

（a）为有志在学术界发展的同学提供发表顶刊和顶会的条件和基础；

（b）为有志在工业界发展的同学提供尽早的实习机会，以及和顶尖企业合作的机会；

（c）课题组风气良好，成员均努力奋进，没有良好的工作态度和志向的同学请三思。

2020 国家特聘青年专家

2020 上海市特聘专家

2016-2019 先后6次获得美国高通公司高通之星和高通超级星奖章

2011-2016 先后2次获得美国英特尔公司逻辑技术发展部奖章

2019/12-至今复旦大学正高级研究员，博士生导师

2016/09-2019/12 美国高通公司主任研发工程师

2011/11-2016/09 美国英特尔公司高级研发工程师

2006/09-2011/11 美国宾夕法尼亚大学物理学博士

2002/09-2006/07 南京大学物理学学士

Selected Journal Publications:

15. Wennan Hu, Yunlin Liu, Zhangcheng Huang, Jianguo Dong, Yue Wang, Weiao Chen, Zhe Sheng, Haoran Sun, Guangxi Hu, Chunxiao Cong, David Wei Zhang, Ye Lu*, Peng Zhou* and Zengxing Zhang*; "Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits", J. Phys. D: Appl. Phys. 56 (2023) 355106

14. Xiaona Zhu, Rongzheng Ding, Ouwen Tao, Yage Zhao, Peishun Tang, David Wei Zhang, Ye Lu*, Shaofeng Yu; "A combined N/PFET Complementary FET based design and technology framework for CMOS applications"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD), Accepted, (2023)

13. Jinxin Zhang, Jiarui Bao, Zhangcheng Huang, Xuan Zeng, Ye Lu; "Automated Design of Complex Analog Circuits with Multiagent based Reinforcement Learning"; 60th IEEE Design Automation Conference (DAC), Accepted (2023)

12. Yunlin Liu,Xiaohe Huang,Kun Luo, Zhenhua Wu,Yan Liu,Chunsen Liu,Guangxi Hu,Peng Zhou and Ye Lu; "A Quantum Corrected Compact Model of Experimentally Fabricated GAA 2D MBCFETs"; IEEE Transactions on Electron Devices (TED), 70, 3, 891(2023)

11. Guodong Qi, Xinyu Chen, Guangxi Hu, Peng Zhou,Wenzhong Bao& Ye Lu; "Knowledge-Based Neural Network SPICE Modeling for MOSFETs and Its Application on 2D Material Field-Effect Transistors"; Science China Information Sciences, 66,122405 (2023)

10. Guodong Qi, Weizhuo Gan, Lijun Xu, Jiangtao Liu, Qihang Yang, Xiaona Zhu, Jiuren Zhou, Xinyu Ma, Guangxi Hu, Tao Chen, Shaofeng Yu, Zhenhua Wu*, Huaxiang Yin, and Ye Lu* " The Device and Circuit Level Benchmark of Si-based Cold Source FETs for Future Logic Technology"; IEEE Transactions on Electron Devices (TED), 69,3483 (2022)

9. Qihang Yang , Guodong Qi , Weizhuo Gan , Zhenhua Wu ,,Huaxiang Yin , Tao Chen ,Guangxi Hu , Jing Wan , Shaofeng Yu , and Ye Lu "Transistor Compact Model Based on Multi-gradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs"; IEEE Transactions on Electron Devices (TED), 68,4181 (2021)

8. Weizhuo Gan, Kun Luo, Guodong Qi, Rapha¨ el J. Prentki, Fei Liu, Jiali Huo, Weixing Huang, Jianhui Bu,Qingzhu Zhang, Huaxiang Yin, Hong Guo, Ye Lu and Zhenhua Wu "A Multi-scale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET"; IEEE Transactions on Electron Devices (TED),68,5455 (2021)

7. Pragya Kushwaha, Harshit Agarwal,Yen-Kai Lin, Avirup Dasgupta,Ming-Yen Kao, Ye Lu, Yun Yue, Xiaonan Chen, Joseph Wang,Wing Sy, Frank Yang, PR. Chidi Chidambaram , Sayeef Salahuddin,and Chenming Hu; "Characterization and Modeling of flicker noise in advanced FinFETs"; IEEE Electron Device Letters (EDL), 40,985 (2019）(*I am the Corresponding author of this paper)

6. S. Ramey, Y. Lu, I. Meric, S. Mudanai, S. Novak, C. Prasad, J. Hicks "Aging model challenges in deeply scaled tri-gate technologies"; IEEE International Integrated Reliability Workshop Proceeding (IIRW),(2016)

5. Anna P. Schall,Patrizia Iavicoli,Zhengqing John Qi,Julien Menko,Ye Lu, Mathieu Linares, Julio C. de Paula, David B. Amabilino, A. T. Johnson and Walter F.Smith;"Photoconductivity of Nanofilaments that are Selfassembled from a Porphyrin"; The Journal of Physical Chemistry C, 119, 26154 (2015)

4. Sung-Wook Nam,Hee-Suk Chung,Yu Chieh Lo,Liang Qi,Ju Li,Ye Lu,A.T. Charlie Johnson,Yeonwoong Jung,Pavan Nukala,Ritesh Agarwal;"Electrical wind force-driven and dislocationtemplated amorphization in Phase-Change Nanowires"; Science, 336, 1561 (2012)

3. Ye Lu, Mitchell B. Lerner, Zhengqing John Qi, Joseph J. Mitala Jr, Jong Hsien Lim, Bohdana M. Discher, and A. T. Charlie Johnson;"Graphene-protein bioelectronic devices with wavelength-tunable photoresponse"; Applied Physics Letters,100,033110(2012)

2. Ye Lu,Christopher A. Merchant,Marija Drndić,and A. T. Charlie Johnson; "In-situ electronic characterization of graphene nanoconstriction fabricated in a transmission electron microscope"; Nano Letters, 11, 5184 (2011)

1. Ye Lu,Brett Goldsmith,Douglas R. Strachan,Jong Hsien Lim,Zhengtang Luo,A. T. Charlie Johnson; "High on/off ratio graphene nanoconstriction field effect transistors"; Small, 6, 2748 (2010)

Selected U.S. PATENTs:

1. Ye Lu et al “Enhanced MOS devices for RF design in 14nm FinFET technology” U.S. PCT 15/816,295 (2018)

2. Ye Lu et al “ High Q-Factor Fin MOS varactor with optimized number of Fins” U.S. PCT 15/816,295 (2017)

3. Ye Lu et al “SAC on active gate for improve MOS varactor Q” U.S. PCT 15/686,827 (2017)

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